PI Cover
Frequency: Continuous
ISSN: 1948-9803 (Print)
ISSN: 1948-9811 (Online)
Research Article Open Access

THE STRUCTURE AND MECHANICAL PROPERTIES OF ALUMINA FILM PREPARED BY RF DIODE SPUTTERING

H. Panitchakan1 and P. Limsuwan2
  • 1 Department of Physics, King Mongkut’s University of Technology Thonburi, Bangkok 10140, Thailand
  • 2 Thailand Center of Excellence in Physics, CHE, Ministry of Education, Bangkok 10400, Thailand

Abstract

Alumina (Al2O3) films were prepared on Al2O3-TiC substrates by RF diode sputtering. The target sputtering power was varied from 4 to 8 kW. The effects of target sputtering power on the structure and mechanical properties of alumina films were investigated. The results show that the structure of the alumina films deposited at all the target sputtering powers is amorphous. However, under the exposure to the electron beam during the Transmission Electron Microscopy (TEM) measurements, the structure of alumina films becomes crystalline. The hardness and elastic modulus of alumina films were found to increase as the target sputtering power was increased.

Physics International
Volume 4 No. 1, 2013, 73-80

DOI: https://doi.org/10.3844/pisp.2013.73.80

Submitted On: 29 April 2013 Published On: 17 July 2013

How to Cite: Panitchakan, H. & Limsuwan, P. (2013). THE STRUCTURE AND MECHANICAL PROPERTIES OF ALUMINA FILM PREPARED BY RF DIODE SPUTTERING. Physics International, 4(1), 73-80. https://doi.org/10.3844/pisp.2013.73.80

Open AccessCopyright: © 2013 H. Panitchakan and P. Limsuwan. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

  • 3,772 Views
  • 3,557 Downloads
  • 1 Citations

Download

Keywords

  • Alumina Film
  • Sputtering Power Target
  • RF Diode Sputtering
  • Al2O3-TiC Substrate